Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with69Ga+, Bi3+/Cs+and C60+/C602+as primary and sputter ions

Hall J, Bexell U, Fletcher JS, Canovic S, Malmberg P

Materials at High Temperatures 32 (1-2) 133-141 [2015-01-00; online 2015-01-19]

Gothenburg Imaging Mass Spectrometry [Collaborative]

QC bibliography QC xrefs

DOI 10.1179/0960340914z.00000000089

Crossref 10.1179/0960340914z.00000000089